Development and Fabrication of Carbon Nanotube (CNT) based Morphological and Electrical Characterization

This paper presents the development and fabrication of carbon nanotube (CNT) based sensor devices through morphological and electrical characterization. The silicon oxide (SiO2) as insulator is formed by dry oxidation process and Aurum (Au) layer is deposited using thermal evaporator. Then, the electrodes pattern is transferred by photolithography process. The single-walled carbon nanotubes (SWNTs) were mixed with isopropyl alcohol (IPA) for dispersion process. The suspended SWNT was aligned between the electrodes gap by using AC dielectrophoresis method. The composition of SWNT aligned was determined by The conductivity of SWNT aligned on devices was decreases as pH buffer solution increases. Capacitances value for pre-SWNT aligned is much higher than post-SWNT aligned.